Impact of Different Antireflection Layers on Cadmium Telluride (CdTe) Solar Cells: a PC1D Simulation Study

Impact of Different Antireflection Layers on Cadmium Telluride (CdTe) Solar Cells: a PC1D Simulation Study

Authors: Devendra KC, Deb Kumar Shah, Amer M. Alanazi & M. Shaheer Akhtar

Journal of Electronic Materials

https://www.springer.com/journal/11664

Received: 02 September 2020: Accepted: 10 December 2020: Published

23 January 2021

DOI

https://doi.org/10.1007/s11664-020-08696-5

Cite this article.

KC, D., Shah, D.K., Alanazi, A.M. et al. Impact of Different Antireflection Layers on Cadmium Telluride (CdTe) Solar Cells: a PC1D Simulation Study. Journal of Elec Materi (2021). https://doi.org/10.1007/s11664-020-08696-5

Abstract

Cadmium telluride (CdTe) is currently known to be one of the reliable cost-effective materials for manufacturing solar cells. In this work, different materials such as magnesium fluoride (MgF2), aluminum trioxide (Al2O3), tin oxide (SnO2), and magnesium oxide (MgO) were applied as a single antireflection coating (ARC) layer and characterized their optoelectrical properties of the resulting CdTe solar cells. A personal computer one-dimensional (PC1D) simulation study was carried out to instigate the overall performance when varying the thickness of the absorber and window layers. Simulation results confirmed that Al2O3 single ARC layer with thickness of 83 nm achieved the best efficiency of 17.81% as compared with the other ARC materials. The Al2O3 single ARC layer resulted in a short-circuit current of 2.89 A and open-circuit voltage of 0.740 V.

Keywords

Antireflection materials, CdTe solar cells, PC1D simulation, optoelectrical properties, conversion efficiency

 

Refined optoelectronic properties of silicon nanowires for improving photovoltaic properties of crystalline solar cells: a simulation study

Refined optoelectronic properties of silicon nanowires for improving photovoltaic properties of crystalline solar cells: a simulation study.

Authors: Deb Kumar Shah, Jaeho Choi, Devendra KC, M. Shaheer Akhtar, Chong Yeal Kim and O-Bong Yang

Journal of Materials Science: Materials in Electronics (2021)

Cite this article:

Shah, D.K., Choi, J., KC, D. et al. Refined optoelectronic properties of silicon nanowires for improving photovoltaic properties of crystalline solar cells: a simulation study. J Mater Sci: Mater Electron (2021). https://doi.org/10.1007/s10854-020-05031-w

Received 17 August 2020, Accepted 01 December 2020, Published 02 January 2021

DOI: https://doi.org/10.1007/s10854-020-05031-w

Abstract:

Tremendous works have been devoted on reducing the materials costs and searching a low-cost antireflection (AR) layer in silicon (Si) solar cells. This work reports on the surface architectural of Si wafer (p-type) by growing the nanowires (NWs)-like structures through cost-effective wet-controlled etching method. The nanostructures over Si wafer were optimized in terms of sizes, lengths and densities by changing the etching conditions and thoroughly examined their growth and optoelectrical properties. The well-defined grown NWs textured on Si wafer exhibited the low average reflectance of ~ 2.25% in the full visible-NIR spectrum from 400 to 1000 nm which was well matched to the simulated average reflectance of 2.23%. A model was designed using PC1D simulation to evaluate the photovoltaic (PV) parameters of NWs textured Si wafer-based solar cells without AR layer. In this simulation, the length of SiNWs and reflectance were selected as input parameters to instigate the power conversion and quantum efficiencies of solar cells. The highest conversion efficiency of ~ 16.2% is observed when the average length of SiNWs and reflectance were ~ 2.52 μm and ~ 2.25%, respectively. Experimentally, the fabricated SiNWs-based solar cell with etching time of 20 min attained the highest conversion efficiency of 15.9% and the value was very close to simulated results. PV parameters of SiNWs-based solar cells without AR layer were comparable to commercial c-Si solar cells with SiNx AR layer. Thus, the controlled wet etching is an easy, facile method for fabrication of nanowires on Si wafer with low reflectance. The enhancement in optical and electrical properties would be expected to a great prospect in developing low-cost c-Si solar cells without AR layer.

Link:

https://link.springer.com/article/10.1007/s10854-020-05031-w#citeas 

Vertically Arranged Zinc Oxide Nanorods as Antireflection Layer for Crystalline Silicon Solar Cell: A Simulation Study of Photovoltaic Properties

Vertically Arranged Zinc Oxide Nanorods as Antireflection Layer for Crystalline Silicon Solar Cell: A Simulation Study of Photovoltaic Properties

Authors: Deb Kumar Shah, Devendra KC, M. Shaheer Akhtar, Chong Yeal Kim and O-Bong Yang
School of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896,  Korea; dkshah149@gmail.com
Received: 31 July 2020; Accepted: 27 August 2020; Published: 1 September 2020

Appl. Sci. 2020, 10(17), 6062; https://doi.org/10.3390/app10176062

Abstract: 

This paper describes the unique antireflection (AR) layer of vertically arranged ZnO
nanorods (NRs) on crystalline silicon (c-Si) solar cells and studies the charge transport and photovoltaic
properties by simulation. The vertically arranged ZnO NRs were deposited on ZnO-seeded c-Si
wafers by a simple low-temperature solution process. The lengths of the ZnO NRs were optimized
by changing the reaction times. Highly dense and vertically arranged ZnO NRs were obtained
over the c-Si wafer when the reaction time was 5 h. The deposited ZnO NRs on the c-Si wafers
exhibited the lowest reflectance of ~7.5% at 838 nm, having a reasonable average reflectance of ~9.5%
in the whole wavelength range (400–1000 nm). Using PC1D software, the charge transport and
photovoltaic properties of c-Si solar cells were explored by considering the lengths of the ZnO NRs
and the reflectance values. The 1.1 m length of the ZnO NRs and a minimum average reflectance of
9.5% appeared to be the optimum values for achieving the highest power conversion eciency of
14.88%. The simulation study for the vertically arranged ZnO NRs AR layers clearly reflects that
the low-temperature deposited ZnO NRs on c-Si solar cells could pose a greater prospect in the
manufacturing of low-cost c-Si solar cells.

Keywords: 

zinc oxide; thin film; silicon solar cells; antireflection layer; power conversion eciency;
PC1D simulation

https://www.mdpi.com/2076-3417/10/17/6062

Development and Characterization of Solar Simulator for Solar Cells

Title: Development and Characterization of Solar Simulator for Solar Cells

Authors: In Sung Jung, Jaeho Choi, Deb Kumar Shah and M. Shaheer Akhtar

Abstract:

The solar simulator is crucial instrument to determine the performance of solar cells and modules which are core components of solar power plants. Therefore, a precise performance measurement of solar cells is very important to think design a cost effective solar stimulator with high accuracy. This paper proposes the development of a precise and measurable innovative solar simulator technique. The designed solar stimulator is a continuous type for 6 inch solar cell measurement in which a reflector system is added for improving the uniformity of result. In addition, 2∼6 light emitting diodes (LEDs) have attached to the one side of the reflector. For reliable evaluation, the standard measurement of IEC60904-3 was applied and matched the uniformity, temporal instability, and spectrum values under 1000 W/m2 light intensity condition. The uniformity of the solar simulator was recorded to 1.43% by using Al reflector and LED, which was highly comparable to 3.06 before its utilization (without reflector). Thus, designed stimulator improved the temporal instability and spectrum match values, which might be considered as a class A.

Keywords: Solar Cell, PV Module, Uniformity, Solar Simulator

Citations:: 

In Sung Jung, Jaeho Choi, Deb Kumar Shah and M. Shaheer Akhtar, 2020, Development and Characterization of Solar Simulator for Solar Cells, Journal of Nanoelectronics and Optoelectronics, 15(6), pp.673-776

 American Scientific Publishers

https://doi.org/10.1166/jno.2020.2802

 

 

 

 

A research article in Crystalline Silicon solar cell

InGaP Window Layer for Gallium Arsenide (GaAs) based Solar Cell Using PC1D Simulation

Authors: Devendra KC, Deb Kumar Shah, Raju Wagle, Anik Shrivastava and Deependra Parajuli

Abstract

Improving the overall performance of the PV cell can play crucial role to the total generated photovoltaic power worldwide. An efficient window layer is essential to check the front surface recombination in the solar cell. In this paper, we explored InGaP window layer for GaAs solar cell and analyzed performance with the help of PC1D simulation software. For this, we have varied thickness and doping level of InGaP window layer and performance of the solar cell has been examined with the help of current-voltage (I-V) characteristics. We also reviewed the effect of temperature on the performance of the solar cell. It has been found that the short circuit current 3.192 A, open circuit voltage 0.8959 V and power conversion efficiency 25.78% of InGaP/GaAs solar cell at window layer thickness 30 nm with doping level 1.00E+17cm3.

Journal of Advanced Research in Dynamical and Control Systems - JARDCS

Volume 12 | 07-Special Issue, 2020

 Pages: 2878-2885

DOI: 10.5373/JARDCS/V12SP7/20202430

Link: https://www.jardcs.org/abstract.php?id=5857

Research Article in dye-sensitized solar cells

https://www.sciencedirect.com/science/article/pii/S0009261420306710

A stable gel electrolyte based on poly butyl acrylate (PBA)-co-poly acrylonitrile (PAN) for solid-state dye-sensitized solar cells

https://doi.org/10.1016/j.cplett.2020.137756

Highlights

•

A gel polymer electrolyte is prepared by PAN-co-PBA copolymer for DSSCs.

•

PAN-co-PBA gel electrolyte shows the good ionic conductivity of 3.86 mS.cm-1.

•

A reasonably good conversion efficiency of 5.23% is attained by fabricated DSSCs with PAN-co-PBA gel electrolyte.

•

PAN-co-PBA exhibits good gelation and proper pore filling properties.

Abstract

This work deals the preparation of a new polymer gel electrolyte using an efficient poly (acrylonitrile)-co-poly (butyl acrylate) (PAN-co-PBA) for solid-state DSSCs. Prepared PAN-co-PBA exhibited the superabsorbent behavior as seen the carboxylate group in copolymer. An excellent gelation with iodide couple and high ionic conductivity of 3.86 mS/cm was recorded for PAN-co-PBA gel electrolyte. Fabricated DSSC with 7% PAN-co-PBA attained the highest overall conversion efficiency of ∼5.23% along with high JSC=13.16 mA/cm2, VOC=0.646 V and FF=0.62. Improved DSSC performance might be related to excellent gelation and high ionic conductivity of PAN-co-PBA gel electrolyte, resulting in improving interfacial contact and pore filling.

Keywords

Polymer Electrolytes

Co-polymer

Dye Sensitized Solar Cell

Ionic conductivity

Photocurrent density

यात्राको संझना !

यात्राको संझना
हाल म अध्ययनरत छोन्बुक राष्ट्रिय विश्वविद्यालय, जन्जु, दक्षिण कोरिया बाट दक्षिण कोरियाकै अर्को शहर योसु सम्मको दुई घण्टाको यात्रामा मेरो मानस पटलमा धेरै कुरा खेल्यो र लेख्दा सम्म खेलिरहेको छ । म आज भन्दा पहिला यस्तो यात्रा स्मरण लेखेको पनि थिएन तर आज न लेखि मनले मानी रहेको छैन । मेरो नेपाली भाषा पनि त्यस्तो सुद्ध पनि हुदैन, त्यो मलाई थाहा छ । तैपनि जस्तो सुकै भएपनि लेखेर आफ्नो मन भाडास पोख्दै छु । किनभने फुर्सत पनि छ, तर पढ्नलाई साथीहरु लाई फुर्सत छ कि छैन मलाई थाहा छैन ।

जन्जुबाट यात्रा प्रारम्भ गर्दा पहाडै पहाड़ भएर सडकको संजाल रहेको छ । लाग्थ्यो काठमाडौँ बाट पोखरा गईरहेको तर फरक यति थियो कि सडकको बनावट । हाम्रो देश नेपालमा एक लेनको साँगुरो सडक नदीको किनारै किनार नागबेली आकार मै बनाउनु पर्छ भने जस्तो मान्यता रहेको पाइन्छ । तर यहाँ सडक भनेको कम्तीमा २-३ लेनको एक तर्फी सिधा हुनुपर्छ, चाहे बीचमा जंगल आयोस कि पहाड आओस, बाटो लगभग १८० डिग्रीको कोण र एकतर्फी हुनैपर्ने । आजको दुई घण्टाको यात्रामा हरेक १० देखि १५ मिनेटमा पहाड़ आऊथियो तर सडक सिधै हुन्थ्यो । पहाड़मा प्वाल गरेर टनेल बनाएको चाहे त्यो ५ मिटर होस् कि १ किलोमिटर किन न होस् तर सडक बाङ्गो थिएन । सडक नदीको किनारै किनार हुने त कुरै थिएन । त्यस्तो सडकमा दुर्घटनाको त सम्भावना हुने कुरै भएन ।

अनि हाम्रो देशको सडकलाई सम्झे अनि हाम्रो देशको प्राबिधिकहरुलाई सम्झे, के सम्झेर सम्भाव्यता अध्ययन गर्छ होला? खाली बजेटको अभाबलाई मात्रै हेर्ने कि मानब जिबनको महत्वलाई पनि हेर्ने ? बरु सडक बन्दैन भने न बनोस तर दैनिक रुपमा अनाहकमा मान्छे मार्ने सडक चाहि न बनाओस ।

थुप्रै प्राबिधिक, नीति निर्माता, उच्च ओहदामाबस्ने कर्मचारी, नेताहरु विदेश भ्रमणमा गएर यस्ता संरचना न हेरेका पकै छैन होला । तै पनि हाम्रो देशमा पनि यस्ता सडकहरु बन्दैन । अब भविस्यमा बन्ने सडकको सम्भाव्यता अध्ययन राम्रो संग होस् र त्यही अनुरुप सडक निर्माण होस् । सडक चाही मान्छे मार्ने उध्योग न होस् भने आशा गर्नु बाहेक अरु के नै गर्न सकिन्छ र ।
धन्यवाद !