https://www.ingentaconnect.com/content/asp/nnl/2019/00000011/00000002/art00002%3bjsessionid=6k8g6c3na3q9i.x-ic-live-02
Effect of Ag Doping in Double Antireflection Layer on Crystalline Silicon Solar Cells
Publisher: American Scientific Publishers
Abstract:
This paper describes the architecture for designing double layer antireflection (AR) deposition on crystalline Si solar cells and demonstrates their optical, structural and photovoltaic properties. Zinc oxide (ZnO) and silver (Ag) doped ZnO were used to create a double AR layer on crystalline Si solar cells using a simple sol–gel technique followed by annealing. For double AR layer deposition, ZnO and Ag-doped ZnO precursors were coated one by one through spin coating technique at 3000 rpm for 30 s followed by annealing at 500 C for 4 h. The double ZnO/Ag-doped ZnO AR on Si wafer showed the considerable decrease in the average reflectance of ∼7.13% in the wavelength range of 400–1000 nm. Whereas, single ZnO and Ag-doped ZnO AR layer on Si wafer presented low average reflectance of ∼10.5% and 8.67% in the wavelength range of 400–1000 nm, respectively. The sheet resistance measurement reveals that double ZnO/Ag-doped ZnO AR on Si wafer displayed lower resistance as compared to bare Si wafer and single ZnO AR on Si wafer. The optimal double ZnO/Ag-doped ZnO AR on Si wafer with low reflectance and good surface properties can be a promising candidate for fabricating high performance Si solar cells with low cost.
