Authors:
- Houcine Naim,
- Deb Kumar Shah,
- Lok Nath Sharma,
- Raju Chaudhary,
- Jaeho Choi,
- Ahmad Umar &
- M. Shaheer Akhtar
Citation:
Naim, H., Shah, D.K., Sharma, L.N. et al. Design optimization of InGaP active layers and multilayer antireflection coatings for enhanced quantum efficiency. J Opt (2026). https://doi.org/10.1007/s12596-026-03164-5
Abstract:
This study explores the optimization of Indium Gallium Phosphide (InGaP) solar cells through detailed simulations using PC1D software. The research focuses on the impact of active layer thickness and dopant concentration on the overall efficiency of solar cells. The maximum efficiency of 17.45% was achieved at a thickness of 175 μm and a dopant concentration of 1.1 × 1017 cm− 3for the base layer. Similarly, for the emitter layer, peak efficiency reached 17.45% at 1 μm thickness and the same dopant concentration. The study also evaluates the effects of various antireflection coatings (ARCs), including TiO2, ZnO, ZnS, SiO2, and SnO2, on the performance of the solar cell. By optimizing the reflectance, refractive index, thickness of the base, emitter, and antireflective coatings, the solar cell’s efficiency improved significantly. Among the tested ARCs, SnO2 demonstrated the best performance, leading to an increase in efficiency of up to 23.9%. The overall optimized solar cell design showed a current of 0.0374 A, a maximum power of 0.0149 W, and a maximum external quantum efficiency of 99% for optimized SnO2 ARC coating. This comprehensive analysis provides valuable insights into enhancing the design and fabrication of efficient InGaP solar cells, contributing to advancements in photovoltaic technology.
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