Impact of Different Antireflection Layers on Cadmium
Telluride (CdTe) Solar Cells: a PC1D Simulation Study
Authors:
Devendra KC, Deb Kumar Shah, Amer M. Alanazi & M. Shaheer Akhtar
Journal of Electronic
Materials
https://www.springer.com/journal/11664
Received: 02 September 2020: Accepted: 10 December
2020: Published
23 January 2021
DOI
https://doi.org/10.1007/s11664-020-08696-5
Cite this article.
KC, D., Shah, D.K., Alanazi, A.M. et al. Impact of
Different Antireflection Layers on Cadmium Telluride (CdTe) Solar Cells: a PC1D
Simulation Study. Journal of Elec Materi (2021).
https://doi.org/10.1007/s11664-020-08696-5
Abstract
Cadmium telluride (CdTe) is currently known to be one
of the reliable cost-effective materials for manufacturing solar cells. In this
work, different materials such as magnesium fluoride (MgF2), aluminum trioxide
(Al2O3), tin oxide (SnO2), and magnesium oxide (MgO) were applied as a single
antireflection coating (ARC) layer and characterized their optoelectrical
properties of the resulting CdTe solar cells. A personal computer
one-dimensional (PC1D) simulation study was carried out to instigate the overall
performance when varying the thickness of the absorber and window layers.
Simulation results confirmed that Al2O3 single ARC layer with thickness of 83
nm achieved the best efficiency of 17.81% as compared with the other ARC
materials. The Al2O3 single ARC layer resulted in a short-circuit current of
2.89 A and open-circuit voltage of 0.740 V.
Keywords
Antireflection materials, CdTe solar cells, PC1D
simulation, optoelectrical properties, conversion efficiency
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