Influence of Doping Concentration and Thickness of Regions on the Performance of InGaN Single Junction-Based Solar Cells: A Simulation Approach

by 

D. Parajuli

 ^1,†,

Deb Kumar Shah

 ^2,†,

Devendra KC

 ^3,†,

Subhash Kumar

 ⁴,

Mira Park

 ^5,* and

Bishweshwar Pant

 ^6,*

¹

Research Center for Applied Science & Technology, Tribhuvan University, Kathmandu 44600, Nepal

²

School of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, Korea

³

Electrical Department, Gabriel Elektro AS, Myrveien 13, Lebesby Kommune, 9740 Lebesby, Norway

⁴

Department of Applied Chemistry, Delhi Technological University, Delhi 110042, India

⁵

Carbon Composite Energy Nanomaterials Research Center, Woosuk University, Wanju 55338, Korea

⁶

Woosuk Institute of Smart Convergence Life Care (WSCLC), Woosuk University, Wanju 55338, Korea

^*

Authors to whom correspondence should be addressed.

^†

These authors contributed equally to this work.

Academic Editors: Qi Zhang, Wenhui Pei and Xudong Liu

Electrochem 2022, 3(3), 407-415; https://doi.org/10.3390/electrochem3030028 (registering DOI)

Received: 30 May 2022 / Revised: 20 July 2022 / Accepted: 25 July 2022 / Published: 28 July 2022

(This article belongs to the Special Issue Advances in Electrochemical Energy Storage Systems)

Abstract

The impact of doping concentration and thickness of n-InGaN and p-InGaN regions on the power conversion efficiency of single junction-based InGaN solar cells was studied by the Silvaco ATLAS simulation software. The doping concentration 5 × 10¹⁹ cm⁻³ and 1 × 10¹⁵ cm⁻³ were optimized for n-InGaN and p-InGaN regions, respectively. The thickness of 300 nm was optimized for both n-InGaN and p-InGaN regions. The highest efficiency of 22.17% with J_sc = 37.68 mA/cm², V_oc = 0.729 V, and FF = 80.61% was achieved at optimized values of doping concentration and thickness of n-InGaN and p-InGaN regions of InGaN solar cells. The simulation study shows the relevance of the Silvaco ATLAS simulation tool, as well as the optimization of doping concentration and thickness of n- and p-InGaN regions for solar cells, which would make the development of high-performance InGaN solar cells low-cost and efficient. View Full-Text

Keywords: InGaN solar cell; doping concentration; thickness; single junction; efficiency; Silvaco ATLAS simulation