In-Search of Efficient Antireflection Coating Layer for Crystalline Silicon Solar Cells: Optimization of the Thickness of Nb2O5 Thin Layer
Published online: 08 Nov 2021, Volume:17, Page: 35-39
Abstract:
The purpose of providing an
anti-reflection coating (ARC) layer on the surface of crystalline silicon
(c-Si) solar cells is to stipulate a unique dielectric material medium that
causes destructive interference of the reflected light from device surfaces and
minimize the reflection of light, which can enhance the optoelectrical
properties. The optimization of thickness of
niobium pentoxide (Nb2O5) as an ARC layer using a
low-cost, sol-gel spin coating deposition process for the high photovoltaic performance of the c-Si
solar cell using a PC1D simulation study. The lowest average reflectance
of ~7.21% was achieved at 75 nm thickness of the ARC layer in comparison to others.
In a simulation, the different value of thicknesses of the ARC layers was
selected as input parameters to explore the photovoltaic characteristics of c-Si
solar cells. The
simulated results show that the highest power conversion efficiency (PCE) of
17.92% and more
than 95% external quantum efficiency (EQE) at 75 nm thickness of
ARC layer. This work on the
optimization of thicknesses of the ARC layer would provide the utilization of
low-cost Nb2O5 ARC layer-based for the development of high-performance c-Si solar
cells.
Keywords:
Silicon solar cell, ARC layer, Nb2O5,
Optimization, Thickness, Photovoltaic Properties
