Computational study on the performance of zinc selenide as window layer for efficient GaAs solar cell
Authors:
Devendra KC, Deb Kumar Shah, and Anik Shrivastav
https://doi.org/10.1016/j.matpr.2021.06.077
Cite:
KC Devendra, Deb Kumar Shah, Anik Shrivastava, Computational
study on the performance of zinc selenide as window layer for efficient GaAs
solar cell,
Materials Today:
Proceedings, 2021, ISSN 2214-7853.
Abstract:
Abstract
This paper reports the optimization of zinc selenide as a window layer for GaAs solar cells in terms of thickness, carrier concentration, and bandgap of the material. Zinc selenide has been chosen for the window layer for appropriate front surface combination with absorber layer for the best performance in GaAs solar cell. The characteristics like current-power curve and efficiency have been analyzed by the PC1D modeling tool by varying different parameters like thickness, carrier concentration, and bandgap of window layer. The short-circuit current of 3.2 A, open-circuit voltage of 0.871 V, and the highest power conversion efficiency of 24.55% of solar cell has been observed at the thickness of 50 nm of the window layer. The electron and hole densities have been observed 1.1 × 1016 cm−3 and 1 × 1015 cm−3 respectively at distance from front in the range from 0 μm to 5 μm. The highest power conversion efficiency of 24.26% has been achieved at carrier concentration 1 × 1016 cm−3, which confirms that the proposed GaAs solar cell could be highly efficient to fabricate commercially at low a cost.
GaAs solar cell
ZnSe window layer
Carrier concentration
Efficiency
Simulation
